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NITRIDE YHJ-65P150TK product image
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NITRIDE YHJ-65P150TKRoHS

Manufacturer
NITRIDEAsian Brands
MPN
YHJ-65P150TK
LCSC Part #
C41371701
Packaging
TO-220
Customer #
Key Attributes
Casc0de GaN HEMT
Datasheetpdf iconNITRIDE YHJ-65P150TK
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNITRIDE
PackagingTO-220
Drain to Source Voltage650V
Current - Continuous Drain(Id)12A
Output Capacitance(Coss)29pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
TechnologyE-mode
Pd - Power Dissipation-
RDS(on)150mΩ@6V
Reverse Transfer Capacitance (Crss@Vds)1pF
Number1 N-channel
Input Capacitance(Ciss)505pF
Gate Charge(Qg)12nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

YHJ- 65P150TK is a normally- off GaN High electron mobility transistor (HEMT) device using the cascode configuration, which provides high breakdown voltage, high current and high operating speed which is suitable for high power applications.

Features

AI Translation
  • Gate drive voltage compatibility (-20V to +20V)
  • Pin assignment P2P competable with silicon (SJ) and SiC MOSFET
  • High operating frequency
  • Low Qrr

Applications

AI Translation
  • Switch Mode Power Supplies (SMPS)
  • AC-DC/DC-DC Converters
  • Motor Drives