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NITRIDE YHJ-65P150AMC product image
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NITRIDE YHJ-65P150AMCRoHS

Manufacturer
NITRIDEAsian Brands
MPN
YHJ-65P150AMC
LCSC Part #
C22458936
Packaging
DFN-8(8x8)
Customer #
Key Attributes
Casc0de GaN HEMT
Datasheetpdf iconNITRIDE YHJ-65P150AMC

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNITRIDE
PackagingDFN-8(8x8)
Drain to Source Voltage650V
Output Capacitance(Coss)29pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation-
TechnologyE-mode
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)150mΩ@10V
Number-
Input Capacitance(Ciss)505pF
Gate Charge(Qg)10nC
Type-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

YHJ- 65P150AMC is a normally- off GaN High electron mobility transistor (HEMT) device using the cascode configuration, which provides high breakdown voltage, high current and high operating speed which is suitable for high power applications.

Features

AI Translation
  • Gate drive voltage compatibility (- 20V to +20V)
  • High operating frequency
  • Low Qrr

Applications

AI Translation
  • Switch Mode Power Supplies (SMPS)
  • AC- DC/DC- DC Converters
  • Motor Drives
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