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NITRIDE YHJ-65H225AMC product image
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NITRIDE YHJ-65H225AMCRoHS

Manufacturer
NITRIDEAsian Brands
MPN
YHJ-65H225AMC
LCSC Part #
C22458937
Packaging
DFN-8(8x8)
Customer #
Key Attributes
65H225 Series Integrated GaNFET
Datasheetpdf iconNITRIDE YHJ-65H225AMC

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNITRIDE
PackagingDFN-8(8x8)
Drain to Source Voltage650V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
TechnologyE-mode
Pd - Power Dissipation63W
RDS(on)215mΩ
Reverse Transfer Capacitance (Crss@Vds)1pF
Input Capacitance(Ciss)90pF
Gate Charge(Qg)1.6nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

YHJ- 65H225 series are integrated GaNFET which possesses not only E- mode GaN's benefits but also compatibility with commonly- seen e- mode GaN, Cascode GaN and Si MOSFET. YHJ- 65H225 series provides high breakdown voltage, high current and high operating speed which is suitable for high power applications.

Features

AI Translation
  • Gate drive voltage compatibility (- 10V to 15V)
  • High operating frequency
  • Zero reverse recovery loss

Applications

AI Translation
  • Switch Mode Power Supplies (SMPS)
  • AC- DC/DC- DC Converters
  • Motor Drives
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