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HXY MOSFET HCG65200DAA product image
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HXY MOSFET HCG65200DAARoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
HCG65200DAA
LCSC Part #
C22396442
Packaging
DFN-8(8x8)
Customer #
Key Attributes
650V GaN-on-Silicon Enhancement-mode Power Transistor
Datasheetpdf iconHXY MOSFET HCG65200DAA

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8(8x8)
Drain to Source Voltage650V
Output Capacitance(Coss)27pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation75W
TechnologyE-mode
RDS(on)160mΩ
Reverse Transfer Capacitance (Crss@Vds)0.4pF
Input Capacitance(Ciss)83pF
Gate Charge(Qg)2.3nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece
In-Stock: 5
5 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 4.1885$ 2.7226$ 2.72
10+$ 3.5809$ 2.3276$ 23.28
30+$ 3.2192$ 2.0925$ 62.78
100+$ 2.8542$ 1.8553$ 185.53
500+$ 2.6861$ 1.7460$ 873.00
1,000+$ 2.6099$ 1.6965$ 1696.50
Standard Packaging2500/Full Reel
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