KIOXIA TC58NVG2S0HTA00

The TC58NVG2S0HTA00 is a single 3.3V 4Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048 blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages). The TC58NVG2S0HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

• Organization x8 Memory cell array 4352 x 128K x 8 Register 4352 x 8 Page size 4352 bytes Block size (256K + 16K) bytes
• Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 2008 blocks Max 2048 blocks Power supply VCC = 2.7V to 3.6V
• Access time Cell array to register 25 μs max Read Cycle Time 25 ns min (CL = 50 pF)
• Program/Erase time Auto Page Program 300 μs/page typ. Auto Block Erase 2.5 ms/block typ.
• Operating current Read (25 ns cycle) 30 mA max Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 μA max
• Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
• 8 bit ECC for each 512Byte is required.