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EG Micro EG2113D product image
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EG Micro EG2113DRoHS

Manufacturer
EG MicroAsian Brands
MPN
EG2113D
LCSC Part #
C480658
Packaging
SOP-16
Customer #
Key Attributes
High-power MOSFET and IGBT gate driver chips
Datasheetpdf iconEG Micro EG2113D

Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerEG Micro
PackagingSOP-16
Input Logic Level - Low-300mV~1V
Low Level Delay Time-
High Level Delay Time-
Quiescent Current50uA
Input Logic Level - High-
Voltage - Supply10V~20V
Operating Temperature-45℃~+105℃
Driven ConfigurationHigh Side;Low Side
Current - Output Low(IOL)2A
Rise Time20ns
Fall Time15ns
FeaturesUnder Voltage Protection;Enable shutdown;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH)2A
Load TypeMOSFET;IGBT

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

EG2113D is a cost-effective gate driver IC dedicated to high-power MOSFETs and IGBTs. It integrates a logic signal input processing circuit, dead-time control circuit, lockout circuit, level shift circuit, pulse filter circuit, bootstrap diode, and output driver circuit, designed specifically for drive circuits in brushless motor controllers. The EG2113D supports a high-side operating voltage up to 600V, a wide low-side Vcc supply voltage range of 10V~20V, and quiescent current consumption below 50uA. The IC features a lockout function to prevent simultaneous conduction of the output power transistors. The input channels HIN and LIN incorporate a built-in 200K pull-down resistor, ensuring both the high-side and low-side power MOSFETs remain off when the inputs are floating. Output current capability is 10±2A/2A, available in SOP16 and SOW16 packages.

Features

AI Translation
  • High-side floating bootstrap power supply design, withstand voltage up to 600V
  • Integrated internal bootstrap diode, minimal external components
  • Maximum switching frequency up to 500KHz
  • Low-side VDD voltage range: 3.3V - 5V
  • Low-side VCC voltage range: 10V - 20V
  • Output current capability: 10±2A/2A
  • Built-in dead-time control circuit
  • Integrated latch function, completely prevents simultaneous conduction of high-side and low-side outputs
  • HIN input channel active-high, controls high-side HO output
  • LIN input channel active-high, controls low-side LO output
  • Quiescent current less than 50uA
  • Package types: SOW16 and SOP16

Applications

AI Translation
  • Sine wave inverter
  • Variable frequency pump controller
  • Square wave inverter
  • Electric vehicle controller
  • Brushless motor driver
  • High-voltage Class-D amplifier
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