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ST STPSC2H12D product image
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ST STPSC2H12DRoHS

Manufacturer
ST
MPN
STPSC2H12D
LCSC Part #
C157409
Packaging
TO-220AC
Customer #
Key Attributes
1200 V power Schottky silicon carbide diode
Datasheetpdf iconST STPSC2H12D

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerST
PackagingTO-220AC
Diode Configuration1 Independent
Operating Junction Temperature Range-40℃~+175℃
Voltage - DC Reverse (Vr) (Max)1.2kV
Voltage - Forward(Vf@If)1.5V@2A
Reverse Leakage Current (Ir)12uA@1200V
Non-Repetitive Peak Forward Surge Current15A
Current - Rectified2A
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

Features

AI Translation
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -40 ℃ to 175 ℃
  • Low VF
  • ECOPACK compliant

Applications

AI Translation
  • PFC
  • secondary side applications
In-Stock: 4
4 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.8397$ 1.84
10+$ 1.7979$ 17.98
30+$ 1.7689$ 53.07
100+$ 1.7416$ 174.16
Standard Packaging50/Full Tube
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