onsemi MJD127T4G

Manufacturer	onsemi
MPN	MJD127T4G
LCSC Part #	C111639
Packaging	TO-252(DPAK)
Customer #
Key Attributes	Complementary Darlington Power Transistor
Datasheet	onsemi MJD127T4G

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Manufacturer	onsemi
Packaging	TO-252(DPAK)
Current - Collector Cutoff	10uA
Transition frequency(fT)	4MHz
Collector - Emitter Voltage VCEO	100V
DC Current Gain	1000
Pd - Power Dissipation	1.75W
type	PNP
Current - Collector(Ic)	8A
Operating Temperature	-65℃~+150℃@(Tj)
Vce Saturation(VCE(sat))	4V

AI Translation

Designed for general purpose amplifier and low speed switching applications.

AI Translation

Lead Formed for Surface Mount Applications in Plastic Sleeves
Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series
Monolithic Construction With Built−in Base−Emitter Shunt Resistors
High DC Current Gain: h_FE = 2500 (Typ) @ I_C = 4.0 Adc
Epoxy Meets UL 94 V-0 @ 0.125 in
ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant

In-Stock: 1,062

1,062 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 0.5817	$ 0.58
10+	$ 0.4505	$ 4.51
30+	$ 0.3954	$ 11.86
100+	$ 0.3241	$ 32.41
500+	$ 0.2933	$ 146.65
1,000+	$ 0.2755	$ 275.50
Standard Packaging2500/Full Reel

Better price for more quantity?