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SAMSUNG K4B4G1646E-BMMA product image
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SAMSUNG K4B4G1646E-BMMARoHS

Manufacturer
SAMSUNG
MPN
K4B4G1646E-BMMA
LCSC Part #
C2920165
Packaging
FBGA-96
Customer #
Key Attributes
DDR3L SDRAM
Datasheetpdf iconSAMSUNG K4B4G1646E-BMMA

Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerSAMSUNG
PackagingFBGA-96
Refresh Current-
Memory Size4Gbit
Voltage - Supply1.28V~1.575V
Operating temperature-40℃~+95℃
Clock Frequency933MHz
FeaturesAuto precharge function;Asynchronous reset function;ZQ calibration function;Dynamic on-chip termination;Data mask function
Memory FormatDDR3L SDRAM
Current - Supply18mA
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging112
Sales UnitPiece

Features

AI Translation
  • JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
  • V_DDO = 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
  • 400 MHz f_CK for 800Mb/sec/pin, 533MHz f_CK for 1066Mb/sec/pin, 667MHz f_CK for 1333Mb/sec/pin, 800MHz f_CK for 1600Mb/sec/pin, 933MHz f_CK for 1866Mb/sec/pin
  • 8 Banks
  • Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,12,13
  • Programmable Additive Latency: 0, CL - 2 or CL - 1 clock
  • Programmable CAS Write Latency (CWL) = 5 (DDR3 - 800), 6 (DDR3 - 1066), 7 (DDR3 - 1333), 8 (DDR3 - 1600) and 9(DDR3 - 1866)
  • 8 - bit pre - fetch
  • Burst Length: 8, 4 with ICCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
  • Bi - directional Differential Data - Strobe
  • Internal(self) calibration: Internal self calibration through ZQ pin (RZQ:240 ohm ±1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than T_CASE 85°C, 3.9us at 85°C <
In-Stock: 20
20 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 13.3165$ 13.32
10+$ 12.6997$ 127.00
30+$ 11.6336$ 349.01
112+$ 10.7027$ 1198.70
Standard Packaging112/Full Tray
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