SAMSUNG K4B2G1646F-BYMA

Products Specifications

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	SAMSUNG
Packaging	FBGA-96(7.5x13.3)
Refresh Current	-
Memory Size	2Gbit
Voltage - Supply	1.35V~1.5V
Operating temperature	-40℃~+95℃
Clock Frequency	933MHz
Features	Auto precharge function;Asynchronous reset function;ZQ calibration function;Dynamic on-chip termination;Data mask function
Memory Format	DDR3L SDRAM
Current - Supply	-

AI Translation

JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
VDDO = 1.35V(1.28V - 1.45V) & 1.5V(1.425V - 1.575V)
400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin 933MHz fCK for 1866Mb/sec/pin
8 Banks
Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13
Programmable Additive Latency: 0, CL-2 or CL-1 clock
Programmable CAS Write Latency (CWL)=5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9(DDR3-1866)
8-bit pre-fetch
Burst Length: 8, 4 with ICCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
Bi-directional Differential Data-Strobe
Internal(self) calibration: Internal self calibration through ZQ pin (RZQ:240 ohm ±1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C
Support Industrial Temp -40~95°C

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Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	SAMSUNG
Packaging	FBGA-96(7.5x13.3)
Refresh Current	-
Memory Size	2Gbit
Voltage - Supply	1.35V~1.5V
Operating temperature	-40℃~+95℃
Clock Frequency	933MHz
Features	Auto precharge function;Asynchronous reset function;ZQ calibration function;Dynamic on-chip termination;Data mask function
Memory Format	DDR3L SDRAM
Current - Supply	-

AI Translation

JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
VDDO = 1.35V(1.28V - 1.45V) & 1.5V(1.425V - 1.575V)
400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin 933MHz fCK for 1866Mb/sec/pin
8 Banks
Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13
Programmable Additive Latency: 0, CL-2 or CL-1 clock
Programmable CAS Write Latency (CWL)=5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9(DDR3-1866)
8-bit pre-fetch
Burst Length: 8, 4 with ICCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
Bi-directional Differential Data-Strobe
Internal(self) calibration: Internal self calibration through ZQ pin (RZQ:240 ohm ±1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C
Support Industrial Temp -40~95°C