Rayson RS512M32LM4D2BDS-53BT

Manufacturer	RaysonAsian Brands
MPN	RS512M32LM4D2BDS-53BT
LCSC Part #	C2840158
Packaging	FBGA-200
Customer #
Key Attributes	1.06V~1.95V 16Gbit 1.866GHz LPDDR4X SDRAM FBGA-200 Memory (ICs) RoHS
Datasheet	Rayson RS512M32LM4D2BDS-53BT

Products Specifications

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	Rayson
Packaging	FBGA-200
Refresh Current	470uA
Voltage - Supply	1.06V~1.95V
Memory Size	16Gbit
Operating temperature	-25℃~+85℃
Clock Frequency	1.866GHz
Features	Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function
Memory Format	LPDDR4X SDRAM
Current - Supply	300mA

AI Translation

Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70 - 1.95V; 1.80V nominal – VDD2 = 1.06 – 1.17V; 1.10V nominal VDDQ = 1.06 - 1.17V; 1.10V nominal or Low VDDQ = 0.57 – 0.65V; 0.60 V nominal
Frequency range – 2133 – 10 MHz (data rate range: 4266 – 20 Mb/s/pin)
16n prefetch DDR architecture
8 internal banks per channel for concurrent operation
Single-data-rate CMD/ADR entry
Bidirectional/differential data strobe per byte lane
Programmable READ and WRITE latencies (RL/WL)
Programmable and on-the-fly burst lengths (BL = 16, 32)
Directed per-bank refresh for concurrent bank operation and ease of command scheduling
Up to 8.5 GB/s per die
On-chip temperature sensor to control self refresh rate
Partial-array self refresh (PASR)
Selectable output drive strength (DS)
Clock-stop capability
RoHS-compliant, “green” packaging
Programmable VSS (ODT) termination

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Qty	Unit Price(Reference Only)	Total Amount
1+	$ 12.2913	$ 12.29
10+	$ 10.244	$ 102.44
30+	$ 9.2257	$ 276.77
144+	$ 8.3703	$ 1205.32
Standard Packaging144/Full Tray

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Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	Rayson
Packaging	FBGA-200
Refresh Current	470uA
Voltage - Supply	1.06V~1.95V
Memory Size	16Gbit
Operating temperature	-25℃~+85℃
Clock Frequency	1.866GHz
Features	Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function
Memory Format	LPDDR4X SDRAM
Current - Supply	300mA

AI Translation

Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70 - 1.95V; 1.80V nominal – VDD2 = 1.06 – 1.17V; 1.10V nominal VDDQ = 1.06 - 1.17V; 1.10V nominal or Low VDDQ = 0.57 – 0.65V; 0.60 V nominal
Frequency range – 2133 – 10 MHz (data rate range: 4266 – 20 Mb/s/pin)
16n prefetch DDR architecture
8 internal banks per channel for concurrent operation
Single-data-rate CMD/ADR entry
Bidirectional/differential data strobe per byte lane
Programmable READ and WRITE latencies (RL/WL)
Programmable and on-the-fly burst lengths (BL = 16, 32)
Directed per-bank refresh for concurrent bank operation and ease of command scheduling
Up to 8.5 GB/s per die
On-chip temperature sensor to control self refresh rate
Partial-array self refresh (PASR)
Selectable output drive strength (DS)
Clock-stop capability
RoHS-compliant, “green” packaging
Programmable VSS (ODT) termination