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onsemi MUN5335DW1T1GRoHS

Manufacturer
onsemi
MPN
MUN5335DW1T1G
LCSC Part #
C99680
Packaging
SOT-363
Customer #
Key Attributes
TRANS PREBIAS 50V SOT-363
Datasheetpdf icononsemi MUN5335DW1T1G
In-Stock: 1,290
1,290 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0693$ 0.69
100+$ 0.0556$ 5.56
300+$ 0.0487$ 14.61
3,000+$ 0.0435$ 130.50
6,000+$ 0.0394$ 236.40
9,000+$ 0.0374$ 336.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
Manufactureronsemi
PackagingSOT-363
Current - Collector Cutoff100nA
DC Current Gain140
Vce Saturation(VCE(sat))250mV
Output Voltage(VO(on))200mV
Input Resistor2.2kΩ
Resistor Ratio0.047
Pd - Power Dissipation187mW
Voltage - Input(Max)(VI(off))600mV
Input Voltage (VI(on)@Ic,Vce)800mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN+PNP
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

AI Translation
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant