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Infineon/CYPRESS FM24C04B-GTR product image
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Infineon/CYPRESS FM24C04B-GTRRoHS

Manufacturer
MPN
FM24C04B-GTR
LCSC Part #
C9826
Packaging
SOIC-8
Customer #
Key Attributes
4Kb Serial 5V F-RAM Memory
Datasheetpdf iconInfineon/CYPRESS FM24C04B-GTR
In-Stock: 4,823
4,823 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.6004$ 1.60
10+$ 1.3496$ 13.50
30+$ 1.2115$ 36.35
100+$ 1.0559$ 105.59
500+$ 0.9034$ 451.70
1,000+$ 0.8733$ 873.30
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerInfineon/CYPRESS
PackagingSOIC-8
Sleep mode current (Izz)-
Voltage - Supply4.5V~5.5V
Memory Size4Kbit
Operating temperature-40℃~+85℃
Program / Erase Cycles1 Trillion Cycles
Clock Frequency1MHz
Features-
Data Retention - TDR (Year)38 Years
Current - Supply400uA
Standby Supply Current4uA
InterfaceI2C

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The FM24C04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24C04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. The FM24C04B is capable of supporting 10^12 read/write cycles, or a million times more write cycles than EEPROM. These capabilities make the FM24C04B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24C04B provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24C04B is available in an industry standard 8-pin SOIC package and uses a familiar two-wire protocol. The specifications are guaranteed over the industrial temperature range from -40℃ to +85℃.

Features

AI Translation
  • 4K bit Ferroelectric Nonvolatile RAM
  • Organized as 512 x 8 bits
  • High Endurance 10^12 Read/Writes
  • 38 Year Data Retention
  • NoDelay™ Writes
  • Advanced High-Reliability Ferroelectric Process
  • Fast Two-wire Serial Interface
  • Up to 1 MHz maximum bus frequency
  • Direct hardware replacement for EEPROM
  • Supports legacy timing for 100 kHz & 400 kHz
  • Low Power Operation
  • 5V operation
  • 100 μA Active Current (100 kHz)
  • 4 μA (typ.) Standby Current
  • Industry Standard Configuration
  • Industrial Temperature -40℃ to +85℃
  • 8-pin “Green”/RoHS SOIC (-G)