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Infineon IRF2807STRLPBFRoHS

Manufacturer
MPN
IRF2807STRLPBF
LCSC Part #
C97742
Packaging
D2PAK
Customer #
Key Attributes
MOSFET N-CH 75V 82A D2PAK
Datasheetpdf iconInfineon IRF2807STRLPBF
In-Stock: 628
628 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.4302$ 1.43
10+$ 1.1718$ 11.72
30+$ 1.0288$ 30.86
100+$ 0.8679$ 86.79
500+$ 0.7964$ 398.20
800+$ 0.7639$ 611.12
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingD2PAK
Drain to Source Voltage75V
Current - Continuous Drain(Id)82A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation230W
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.82nF
Gate Charge(Qg)160nC@10V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

Advanced HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D²Pak is a surface mount power package capable of accommodating die sizes up to HEX - 4. It provides the highest power capability and the lowest possible on - resistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through - hole version (IRF2807L) is available for low profile applications.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On - Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead - Free