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onsemi FDS89161LZRoHS

Manufacturer
onsemi
MPN
FDS89161LZ
LCSC Part #
C95003
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH ARR 100V 2.7A SO-8
Datasheetpdf icononsemi FDS89161LZ
In-Stock: 422
422 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.9414$ 0.94
10+$ 0.7492$ 7.49
30+$ 0.6531$ 19.59
100+$ 0.557$ 55.70
500+$ 0.5017$ 250.85
1,000+$ 0.4723$ 472.30
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSO-8
Current - Continuous Drain(Id)2.7A
RDS(on)105mΩ@10V
Pd - Power Dissipation1.6W
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage100V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number2 N-Channel
Input Capacitance(Ciss)302pF
Gate Charge(Qg)5.3nC@10V
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Features

AI Translation
  • Shielded Gate MOSFET Technology
  • Max rDS(on)=105 mΩ at VGS = 10 Vs ID = 2.7 A
  • Max rDS(on)=160 mΩ at VGS = 4.5 V, ID = 2.1 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • CDM ESD protection level > 2KV typical
  • 100% UIL Tested
  • RoHS Compliant

Applications

AI Translation
  • DC-DC conversion
  • SO-8