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Infineon IRF3415STRLPBFRoHS

Manufacturer
MPN
IRF3415STRLPBF
LCSC Part #
C92292
Packaging
D2PAK
Customer #
Key Attributes
MOSFET N-CH 150V 43A D2PAK
Datasheetpdf iconInfineon IRF3415STRLPBF
In-Stock: 204
204 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.6416$ 1.64
10+$ 1.3626$ 13.63
30+$ 1.2101$ 36.30
100+$ 1.0382$ 103.82
500+$ 0.9619$ 480.95
800+$ 0.9279$ 742.32
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingD2PAK
Drain to Source Voltage150V
Current - Continuous Drain(Id)43A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)340pF
RDS(on)42mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF
Gate Charge(Qg)200nC

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX - 4. It provides the highest power capability and the lowest possible on - resistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through - hole version (IRF3415L) is available for low profile applications.

Features

AI Translation
  • Advanced Process Technology
  • Surface Mount (IRF3415S)
  • Low - profile through - hole (IRF3415L)
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated