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onsemi FDS4465RoHS

Manufacturer
onsemi
MPN
FDS4465
LCSC Part #
C92137
Packaging
SO-8
Customer #
Key Attributes
MOSFET P-CH 20V 13.5A SO-8
Datasheetpdf icononsemi FDS4465
In-Stock: 137
137 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.9652$ 0.97
10+$ 0.7894$ 7.89
30+$ 0.6934$ 20.80
100+$ 0.5843$ 58.43
500+$ 0.5355$ 267.75
1,000+$ 0.5127$ 512.70
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSO-8
Drain to Source Voltage20V
Current - Continuous Drain(Id)13.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)8.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)8.237nF
Gate Charge(Qg)120nC@4.5V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P−Channel 1.8 V specified MOSFET is a rugged gate version of ON Semiconductor’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V - 8 V).

Features

AI Translation
  • –13.5 A, -20 V
  • RDS(ON) = 8.5 mΩ @ VGS = -4.5 V
  • RDS(ON) = 10.5 mΩ @ VGS = -2.5 V
  • RDS(ON) = 14 mΩ @ VGS = -1.8 V
  • Fast Switching Speed
  • High Performance Trench Technology for Extremely Low RDS(ON)
  • High Current and Power Handling Capability

Applications

AI Translation
  • Power Management
  • Load Switch
  • Battery Protection