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YANGJIE YJGD20G10A product image
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YANGJIE YJGD20G10ARoHS

Manufacturer
YANGJIEAsian Brands
MPN
YJGD20G10A
LCSC Part #
C919609
Packaging
DFN5060-8L-DUal
Customer #
Key Attributes
MOSFET N-CH ARR 100V 20A DFN5060-8L-DUal
Datasheetpdf iconYANGJIE YJGD20G10A
In-Stock: 295
295 In stock, ships now
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Minimum: 1Multiple: 1Sales Unit: Piece
QtyUnit PriceTotal Amount
1+$ 0.625$ 0.63
10+$ 0.5049$ 5.05
30+$ 0.453$ 13.59
100+$ 0.3896$ 38.96
500+$ 0.3393$ 169.65
1,000+$ 0.3215$ 321.50
Standard Packaging5000/Full Reel

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerYANGJIE
PackagingDFN5060-8L-DUal
Drain to Source Voltage100V
Output Capacitance(Coss)399pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)17mΩ@10V;21mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)1.051nF
Gate Charge(Qg)16nC@10V
TypeN-Channel
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Introduction

AI Translation
  • Split gate trench MOSFET technology
  • High density cell design for low RDS(ON)
  • High Speed switching

Features

AI Translation
  • Split-gate trench MOSFET technology
  • High-density cell design for low R<sub>DS(ON)</sub>
  • High-speed switching

Applications

AI Translation
  • DC-DC Converters
  • Power management functions
  • Industrial and Motor Drive application