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Infineon/CYPRESS S29GL128P11TFIV10 product image
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Infineon/CYPRESS S29GL128P11TFIV10RoHS

Manufacturer
Infineon/CYPRESS
MPN
S29GL128P11TFIV10
LCSC Part #
C914939
Packaging
TSOP-56-14.0mm
Customer #
Key Attributes
2.7V~3.6V 128Mbit TSOP-56-14.0mm Memory (ICs) RoHS
Datasheetpdf iconInfineon/CYPRESS S29GL128P11TFIV10
In-Stock: 91
91 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 7.8903$ 7.89
10+$ 6.8607$ 68.61
30+$ 6.2348$ 187.04
100+$ 5.7078$ 570.78
Standard Packaging91/Full Tray
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerInfineon/CYPRESS
PackagingTSOP-56-14.0mm
Voltage - Supply2.7V~3.6V
Memory Size128Mbit
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
FeaturesPower-on reset;Hardware write protection;Software write protection;Absolute write protection
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)110ns
Standby Supply Current1uA
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging91
Sales UnitPiece

Introduction

AI Translation

The Cypress S29GL01G/512/256/128P are Mirrorbit Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Features

AI Translation
  • Single 3V read/program/erase (2.7 - 3.6 V)
  • Enhanced VersatileI/O™ control – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on V₁₀ input. V₁₀ range is 1.65 to VCC
  • 90 nm MirrorBit process technology
  • 8 - word/16 - byte page read buffer
  • 32 - word/64 - byte write buffer reduces overall programming time for multiple - word updates
  • Secured Silicon Sector region – 128 - word/256 - byte sector for permanent, secure identification through an 8 - word/16 - byte random Electronic Serial Number – Can be programmed and locked at the factory or by the customer
  • Uniform 64 Kword/128 Kbyte Sector Architecture – S29GL01GP: One thousand twenty - four sectors – S29GL512P: Five hundred twelve sectors – S29GL256P: Two hundred fifty - six sectors – S29GL128P: One hundred twenty - eight sectors
  • 100,000 erase cycles per sector typical
  • 20 - year data retention typical
  • Offered Packages – 56 - pin TSOP – 64 - ball Fortified BGA
  • Suspend and Resume commands for Program and Erase operations
  • Write operation status bits indicate program and erase operation completion
  • Unlock Bypass Program command to reduce programming time
  • Support for CFI (Common Flash Interface)
  • Persistent and Password methods of Advanced Sector Protection
  • WP#/ACC input – Accelerates programming time (when Vₕₕ is applied) for greater throughput during system production – Protects first or last sector regardless of sector protection settings
  • Hardware reset input (RESET#) resets device
  • Ready/Busy# output (RY/BY#) detects program or erase cycle completion