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onsemi BDX53BGRoHS

Manufacturer
onsemi
MPN
BDX53BG
LCSC Part #
C906948
Packaging
TO-220
Customer #
Key Attributes
Plastic Medium-Power Complementary Silicon Transistors
Datasheetpdf icononsemi BDX53BG
In-Stock: 48
48 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.2684$ 1.27
10+$ 1.0511$ 10.51
30+$ 0.932$ 27.96
100+$ 0.7968$ 79.68
500+$ 0.7372$ 368.60
1,000+$ 0.7115$ 711.50
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Manufactureronsemi
PackagingTO-220
Current - Collector Cutoff200uA
Emitter-Base Voltage VEBO5V
DC Current Gain750
Current - Collector(Ic)12A
Pd - Power Dissipation65W
typeNPN
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))2V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices are designed for general−purpose amplifier and low−speed switching applications.

Features

AI Translation
  • High DC Current Gain − h_FE = 2500 (Typ) @ I_C = 4.0 Adc
  • Collector Emitter Sustaining Voltage − @ 100 mAdc
    • V_CEO(sus) = 80 Vdc (Min) - BDX53B, 54B
    • = 100 Vdc (Min) - BDX53C, 54C
  • Low Collector−Emitter Saturation Voltage − V_CE(sat) = 2.0 Vdc (Max) @ Ic = 3.0 Adc
  • = 4.0 Vdc (Max) @ Ic = 5.0 Adc
  • Monolithic Construction with Built−In Base−Emitter Shunt Resistors
  • These Devices are Pb−Free and are RoHS Compliant

Applications

AI Translation
  • general−purpose amplifier
  • low−speed switching applications