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onsemi FQD18N20V2TM
| Manufacturer | |
| MPN | FQD18N20V2TM |
| LCSC Part # | C903728 |
| Packaging | TO-252AA |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 15A TO-252AA |
| Datasheet |  onsemi FQD18N20V2TM |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252AA | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 200pF | |
| Current - Continuous Drain(Id) | 15A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 830pF | |
| Gate Charge(Qg) | 20nC@10V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This N-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specifically designed to minimize on-resistance while providing superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 15 A, 200 V, RDS(on) = 140 mΩ (max) @ VGS = 10 V, ID = 7.5 A
- Low gate charge (typical 20 nC)
- Low Crss (typical 25 pF)
- 100% avalanche tested
Applications
- Switching mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.866 | $ 0.87 |
| 10+ | $ 0.8465 | $ 8.47 |
| 30+ | $ 0.8351 | $ 25.05 |
| 100+ | $ 0.8221 | $ 82.21 |
Standard Packaging2500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252AA | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 200pF | |
| Current - Continuous Drain(Id) | 15A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 830pF | |
| Gate Charge(Qg) | 20nC@10V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This N-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specifically designed to minimize on-resistance while providing superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 15 A, 200 V, RDS(on) = 140 mΩ (max) @ VGS = 10 V, ID = 7.5 A
- Low gate charge (typical 20 nC)
- Low Crss (typical 25 pF)
- 100% avalanche tested
Applications
- Switching mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
C903728 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |