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onsemi FDS6912ARoHS

Manufacturer
onsemi
MPN
FDS6912A
LCSC Part #
C903634
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH ARR 30V 6A SO-8
Datasheetpdf icononsemi FDS6912A
In-Stock: 34
34 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7471$ 0.75
10+$ 0.6055$ 6.06
30+$ 0.5355$ 16.07
100+$ 0.4655$ 46.55
500+$ 0.4232$ 211.60
1,000+$ 0.4021$ 402.10
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSO-8
Current - Continuous Drain(Id)6A
RDS(on)28mΩ@10V
Pd - Power Dissipation1.6W
Gate Threshold Voltage (Vgs(th))1.9V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)65pF
Number2 N-Channel
Input Capacitance(Ciss)575pF
Gate Charge(Qg)8.1nC
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

AI Translation
  • These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
  • These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
  • 6 A, 30 V. RDS(ON)=28 mΩ @ VGS=10 V, RDS(ON)=35 mΩ @ VGS=4.5 V
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications

AI Translation
  • Inverter - Power Supply