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onsemi FDS2572RoHS

Manufacturer
onsemi
MPN
FDS2572
LCSC Part #
C903616
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 150V 4.9A SO-8
Datasheetpdf icononsemi FDS2572
In-Stock: 1,927
1,927 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.8639$ 0.86
10+$ 0.696$ 6.96
30+$ 0.6113$ 18.34
100+$ 0.5265$ 52.65
500+$ 0.4776$ 238.80
1,000+$ 0.4515$ 451.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSO-8
Drain to Source Voltage150V
Current - Continuous Drain(Id)4.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.87nF
Gate Charge(Qg)29nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

UltraFET® devices combine multiple features to deliver superior efficiency in power conversion applications. These devices are optimized for on-resistance (Rds(on)), low ESR, low total gate charge and Miller gate charge, making them ideal for high-frequency DC-to-DC converters.

Features

AI Translation
  • On-resistance RDS(ON) = 0.040 Ω (typical), VGS = 10 V
  • Total gate charge Qg(TOT) = 29 nC (typical), VGS = 10 V
  • Low reverse recovery charge (QRR) body diode
  • Efficiency maximization at high frequency
  • Unclamped inductive switching (UIS) rated

Applications

AI Translation
  • DC-to-DC converters
  • Telecom and data communications distributed power architectures
  • 48V input half-bridge/full-bridge circuits
  • 24V forward and push-pull topologies