onsemi MPSA29-D26Z
| Manufacturer | |
| MPN | MPSA29-D26Z |
| LCSC Part # | C903171 |
| Packaging | TO-92-3L |
| Customer # | |
| Key Attributes | NPN Darlington Transistor |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-92-3L | |
| Current - Collector Cutoff | 500nA | |
| Transition frequency(fT) | 125MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 10000 | |
| Current - Collector(Ic) | 800mA | |
| Pd - Power Dissipation | 625mW | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-92-3L | |
| Current - Collector Cutoff | 500nA | |
| Transition frequency(fT) | 125MHz | |
| Collector - Emitter Voltage VCEO | 100V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 10000 | |
| Current - Collector(Ic) | 800mA | |
| Pd - Power Dissipation | 625mW | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.5V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from process 03. See MPSA28 for characteristics.
In-Stock: 175
175 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2696 | $ 1.35 |
| 50+ | $ 0.2656 | $ 13.28 |
| 150+ | $ 0.2629 | $ 39.44 |
| 500+ | $ 0.2602 | $ 130.10 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-92-3L | |
| Current - Collector Cutoff | 500nA | |
| Transition frequency(fT) | 125MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 10000 | |
| Current - Collector(Ic) | 800mA | |
| Pd - Power Dissipation | 625mW | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-92-3L | |
| Current - Collector Cutoff | 500nA | |
| Transition frequency(fT) | 125MHz | |
| Collector - Emitter Voltage VCEO | 100V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 10000 | |
| Current - Collector(Ic) | 800mA | |
| Pd - Power Dissipation | 625mW | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.5V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from process 03. See MPSA28 for characteristics.
C903171 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



