onsemi NVTFS5124PLWFTAG
| Manufacturer | |
| MPN | NVTFS5124PLWFTAG |
| LCSC Part # | C900520 |
| Packaging | WDFN-8(3.3x3.3) |
| Customer # | |
| Key Attributes | 60V 6A 2.5V 200mΩ@10V 1 P-Channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 6A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3W;18W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 250pF | |
| Gate Charge(Qg) | 6nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Compact package (3.3 x 3.3 mm) for space-constrained designs
- Low on-resistance RDS(on) for minimized conduction losses
- Low gate charge QG and capacitance for minimized driving losses
- NVTFS5124PLWF - solderable flank variant
- AEC-Q101 qualified with PPAP capability
- Lead-free, RoHS compliant
In-Stock: 100
100 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9072 | $ 0.91 |
| 10+ | $ 0.886 | $ 8.86 |
| 30+ | $ 0.873 | $ 26.19 |
| 100+ | $ 0.8584 | $ 85.84 |
Standard Packaging1500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 6A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3W;18W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 250pF | |
| Gate Charge(Qg) | 6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Compact package (3.3 x 3.3 mm) for space-constrained designs
- Low on-resistance RDS(on) for minimized conduction losses
- Low gate charge QG and capacitance for minimized driving losses
- NVTFS5124PLWF - solderable flank variant
- AEC-Q101 qualified with PPAP capability
- Lead-free, RoHS compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

