onsemi H11G1SM
| Manufacturer | |
| MPN | H11G1SM |
| LCSC Part # | C899466 |
| Packaging | SMD-6P |
| Customer # | |
| Key Attributes | 6-Pin DIP High Voltage Photodarlington Optocouplers |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | SMD-6P | |
| Fall time | - | |
| Rise time | - | |
| Output Current | - | |
| Vce Saturation(VCE(sat)) | 850mV@50mA,16mA | |
| Load Voltage | 100V | |
| Reverse Voltage | 6V | |
| Current transfer ratio | 500%;1000% | |
| Voltage - Forward(Vf) | 1.3V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 290mW | |
| Operating Temperature | -40℃~+100℃ | |
| Output Type | Darlington Transistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | Darlington output structure |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
Features
AI Translation
- High BVCEO:
- 100 V Minimum for H11G1M
- 80 V Minimum for H11G2M
- High Sensitivity to Low Input Current (Minimum 500% CTR at IF = 1 mA)
- Low Leakage Current at Elevated Temperature (Maximum 100 μA at 80℃)
- Safety and Regulatory Approvals:
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Applications
AI Translation
- CMOS Logic Interface
- Telephone Ring Detector
- Low Input TTL Interface
- Power Supply Isolation
- Replace Pulse Transformer
In-Stock: 2,988
2,988 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5847 | $ 0.58 |
| 10+ | $ 0.4707 | $ 4.71 |
| 50+ | $ 0.4137 | $ 20.69 |
| 100+ | $ 0.3583 | $ 35.83 |
| 500+ | $ 0.3241 | $ 162.05 |
| 1,000+ | $ 0.3078 | $ 307.80 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | SMD-6P | |
| Fall time | - | |
| Rise time | - | |
| Output Current | - | |
| Vce Saturation(VCE(sat)) | 850mV@50mA,16mA | |
| Load Voltage | 100V | |
| Reverse Voltage | 6V | |
| Current transfer ratio | 500%;1000% | |
| Voltage - Forward(Vf) | 1.3V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 290mW | |
| Operating Temperature | -40℃~+100℃ | |
| Output Type | Darlington Transistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | Darlington output structure |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
Features
AI Translation
- High BVCEO:
- 100 V Minimum for H11G1M
- 80 V Minimum for H11G2M
- High Sensitivity to Low Input Current (Minimum 500% CTR at IF = 1 mA)
- Low Leakage Current at Elevated Temperature (Maximum 100 μA at 80℃)
- Safety and Regulatory Approvals:
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Applications
AI Translation
- CMOS Logic Interface
- Telephone Ring Detector
- Low Input TTL Interface
- Power Supply Isolation
- Replace Pulse Transformer
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Type | Details |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |



