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onsemi H11G1SMRoHS

Manufacturer
MPN
H11G1SM
LCSC Part #
C899466
Packaging
SMD-6P
Customer #
Key Attributes
6-Pin DIP High Voltage Photodarlington Optocouplers
Datasheetpdf icononsemi H11G1SM
In-Stock: 2,988
2,988 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.5847$ 0.58
10+$ 0.4707$ 4.71
50+$ 0.4137$ 20.69
100+$ 0.3583$ 35.83
500+$ 0.3241$ 162.05
1,000+$ 0.3078$ 307.80
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryIsolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators
Manufactureronsemi
PackagingSMD-6P
Fall time-
Rise time-
Output Current-
Vce Saturation(VCE(sat))850mV@50mA,16mA
Load Voltage100V
Reverse Voltage6V
Current transfer ratio500%;1000%
Voltage - Forward(Vf)1.3V
Forward Current(If)60mA
Number of Channels1
Total Power Dissipation(Pd)290mW
Operating Temperature-40℃~+100℃
Output TypeDarlington Transistor
Input typeDC
Isolation Voltage(Vrms)4.17kV
FeaturesDarlington output structure

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

Features

AI Translation
  • High BVCEO:
    • 100 V Minimum for H11G1M
    • 80 V Minimum for H11G2M
  • High Sensitivity to Low Input Current (Minimum 500% CTR at IF = 1 mA)
  • Low Leakage Current at Elevated Temperature (Maximum 100 μA at 80℃)
  • Safety and Regulatory Approvals:
    • UL1577, 4,170 VACRMS for 1 Minute
    • DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage

Applications

AI Translation
  • CMOS Logic Interface
  • Telephone Ring Detector
  • Low Input TTL Interface
  • Power Supply Isolation
  • Replace Pulse Transformer