onsemi H11F1M
| Manufacturer | |
| MPN | H11F1M |
| LCSC Part # | C899456 |
| Packaging | DIP-6 |
| Customer # | |
| Key Attributes | Photo FET Optocouplers |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | DIP-6 | |
| Fall time | - | |
| Rise time | - | |
| Output Current | 100mA | |
| Vce Saturation(VCE(sat)) | - | |
| Load Voltage | 30V | |
| Reverse Voltage | 5V | |
| Voltage - Forward(Vf) | 1.3V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 300mW | |
| Operating Temperature | -40℃~+100℃ | |
| Output Type | FET | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 7.5kV | |
| Features | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
Features
AI Translation
- As a remote variable resistor: ≤ 100Ω to ≥ 300 MΩ
- ≤ 15 pF shunt capacitance
- ≥ 100 GΩ I/O isolation resistance
- As an analog switch: Extremely low offset voltage
- 60 Vₚ₋ₚ signal capability
- No charge injection or latch-up
- UL recognized (File #E90700)
Applications
AI Translation
- As a remote variable resistor: Isolated variable attenuator, Automatic gain control, Active filter fine tuning/band switching
- As an analog switch: Isolated sample and hold circuit, Multiplexed, optically isolated A/D conversion
In-Stock: 69
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.5458 | $ 1.55 |
| 10+ | $ 1.2658 | $ 12.66 |
| 50+ | $ 1.1121 | $ 55.61 |
| 100+ | $ 0.9377 | $ 93.77 |
| 500+ | $ 0.8609 | $ 430.45 |
| 1,000+ | $ 0.8257 | $ 825.70 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | DIP-6 | |
| Fall time | - | |
| Rise time | - | |
| Output Current | 100mA | |
| Vce Saturation(VCE(sat)) | - | |
| Load Voltage | 30V | |
| Reverse Voltage | 5V | |
| Voltage - Forward(Vf) | 1.3V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 300mW | |
| Operating Temperature | -40℃~+100℃ | |
| Output Type | FET | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 7.5kV | |
| Features | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
Features
AI Translation
- As a remote variable resistor: ≤ 100Ω to ≥ 300 MΩ
- ≤ 15 pF shunt capacitance
- ≥ 100 GΩ I/O isolation resistance
- As an analog switch: Extremely low offset voltage
- 60 Vₚ₋ₚ signal capability
- No charge injection or latch-up
- UL recognized (File #E90700)
Applications
AI Translation
- As a remote variable resistor: Isolated variable attenuator, Automatic gain control, Active filter fine tuning/band switching
- As an analog switch: Isolated sample and hold circuit, Multiplexed, optically isolated A/D conversion
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Type | Details |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |



