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onsemi FOD3182SDVRoHS

Manufacturer
onsemi
MPN
FOD3182SDV
LCSC Part #
C899265
Packaging
SOP-8-2.54mm
Customer #
Key Attributes
3A output current, high-speed MOSFET gate drive optocoupler
Datasheetpdf icononsemi FOD3182SDV
In-Stock: 45
45 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.4267$ 2.43
10+$ 2.3714$ 23.71
30+$ 2.3339$ 70.02
100+$ 2.2949$ 229.49
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryIsolators/Isolators - Gate Drivers
Manufactureronsemi
PackagingSOP-8-2.54mm
Power Dissipation295mW
FeaturesUnder-voltage lockout
Data Rate250Kbps
Operating Temperature-40℃~+100℃
Reverse Voltage5V
Voltage - Supply10V~30V
Forward Current(If)25mA
CMTI(kV/us)50kV/us
Number of Channels1
Input threshold current7.5mA
Propagation Delay(tpd)210ns;210ns
Voltage - Forward(Vf)1.43V
Isolation Voltage(Vrms)5kV
Input TypeDC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

The FOD3182 is a 3A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters. The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance.

Features

AI Translation
  • High noise immunity characterized by 50kV/µs (Typ.) common mode rejection @CMRR (Common Mode Rejection Ratio) = 2,000
  • Guaranteed operating temperature range of -40℃ to +100℃
  • 3A peak output current
  • Fast switching speed – 210ns max. propagation delay – 65ns max pulse width distortion
  • Fast output rise/fall time – Offers lower dynamic power dissipation
  • 250kHz maximum switching speed
  • Wide VDD operating range: 10V to 30V
  • Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output)
  • 5000Vrms, 1 minute isolation
  • Under voltage lockout protection (UVLO) with hysteresis – optimized for driving MOSFETs
  • Minimum creepage distance of 8.0mm
  • Minimum clearance distance of 10mm to 16mm (option TV or TSV)
  • Minimum insulation thickness of 0.5mm
  • UL and VDE*
  • 1,414 peak working insulation voltage (VIORM)

Applications

AI Translation
  • Plasma Display Panel
  • High performance DC/DC convertor
  • High performance switch mode power supply
  • High performance uninterruptible power supply
  • Isolated Power MOSFET gate drive