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onsemi FCPF13N60NTRoHS

Manufacturer
MPN
FCPF13N60NT
LCSC Part #
C899123
Packaging
TO-220F
Customer #
Key Attributes
MOSFET N-CH 600V 13A TO-220F
Datasheetpdf icononsemi FCPF13N60NT
In-Stock: 648
648 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.1924$ 1.19
10+$ 0.9545$ 9.55
50+$ 0.8057$ 40.29
100+$ 0.6538$ 65.38
500+$ 0.5847$ 292.35
1,000+$ 0.5555$ 555.50
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-220F
Drain to Source Voltage600V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation116W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)220mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.765nF
Gate Charge(Qg)30.4nC@10V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The SupreMOS® MOSFET is next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Features

AI Translation
  • RDS(on)=220 mΩ (Typ.), ID=6.5 A
  • Ultra Low Gate Charge (Typ. Qg=30.4 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.)=145 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

Applications

AI Translation
  • LCD/LED/PDP TV
  • Lighting
  • Solar Inverter
  • AC-DC Power Supply