onsemi FCPF13N60NT
| Manufacturer | |
| MPN | FCPF13N60NT |
| LCSC Part # | C899123 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | MOSFET N-CH 600V 13A TO-220F |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 13A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 116W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 220mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.765nF | |
| Gate Charge(Qg) | 30.4nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The SupreMOS® MOSFET is next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features
- RDS(on)=220 mΩ (Typ.), ID=6.5 A
- Ultra Low Gate Charge (Typ. Qg=30.4 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.)=145 pF)
- 100% Avalanche Tested
- RoHS Compliant
Applications
- LCD/LED/PDP TV
- Lighting
- Solar Inverter
- AC-DC Power Supply
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1924 | $ 1.19 |
| 10+ | $ 0.9545 | $ 9.55 |
| 50+ | $ 0.8057 | $ 40.29 |
| 100+ | $ 0.6538 | $ 65.38 |
| 500+ | $ 0.5847 | $ 292.35 |
| 1,000+ | $ 0.5555 | $ 555.50 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 13A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 116W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 220mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.765nF | |
| Gate Charge(Qg) | 30.4nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The SupreMOS® MOSFET is next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features
- RDS(on)=220 mΩ (Typ.), ID=6.5 A
- Ultra Low Gate Charge (Typ. Qg=30.4 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.)=145 pF)
- 100% Avalanche Tested
- RoHS Compliant
Applications
- LCD/LED/PDP TV
- Lighting
- Solar Inverter
- AC-DC Power Supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



