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onsemi MJD122GRoHS

Manufacturer
onsemi
MPN
MJD122G
LCSC Part #
C89910
Packaging
TO-252(DPAK)
Customer #
Key Attributes
Complementary Darlington Power Transistor
Datasheetpdf icononsemi MJD122G
In-Stock: 442
442 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.1661$ 1.17
10+$ 0.956$ 9.56
30+$ 0.8501$ 25.50
75+$ 0.6742$ 50.57
525+$ 0.6107$ 320.62
975+$ 0.5782$ 563.75
Standard Packaging75/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Manufactureronsemi
PackagingTO-252(DPAK)
Current - Collector Cutoff10uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain1000
Pd - Power Dissipation20W
typeNPN
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃@(Tj)
Vce Saturation(VCE(sat))4V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging75
Sales UnitPiece

Introduction

AI Translation

Designed for general purpose amplifier and low speed switching applications.

Features

AI Translation
  • Lead Formed for Surface Mount Applications in Plastic Sleeves
  • Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series
  • Monolithic Construction With Built−in Base−Emitter Shunt Resistors
  • High DC Current Gain: h_FE = 2500 (Typ) @ I_C = 4.0 Adc
  • Epoxy Meets UL 94 V-0 @ 0.125 in
  • ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant