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onsemi FDB3632 product image
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onsemi FDB3632RoHS

Manufacturer
onsemi
MPN
FDB3632
LCSC Part #
C898557
Packaging
D2PAK-3
Customer #
Key Attributes
310W 100V 4V 7.5mΩ@10V 1 N-channel N-Channel D2PAK-3 Single FETs, MOSFETs RoHS
Datasheetpdf icononsemi FDB3632
In-Stock: 41
41 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 4.265$ 4.27
10+$ 3.6137$ 36.14
30+$ 3.2272$ 96.82
100+$ 2.8358$ 283.58
500+$ 2.6555$ 1327.75
800+$ 2.5743$ 2059.44
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingD2PAK-3
Output Capacitance(Coss)820pF
Pd - Power Dissipation310W
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)12A;80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6nF
Gate Charge(Qg)110nC@10V
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is manufactured using an advanced Power Trench process, specifically engineered to minimize on-resistance while maintaining superior switching performance.

Features

AI Translation
  • RDS(ON) = 7.5 mΩ (typical), VGS = 10 V, ID = 80 A
  • Qg(tot) = 84 nC (typical), VGS = 10 V
  • Low Miller charge
  • Low Qrr body diode
  • UIS capability (single pulse and repetitive pulse)
  • Lead-free and RoHS compliant

Applications

AI Translation
  • Synchronous rectification
  • Battery protection circuits
  • Motor drivers and UPS
  • Micro solar inverters