onsemi TIP122G
| Manufacturer | |
| MPN | TIP122G |
| LCSC Part # | C897224 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | 100V 1000 NPN 5A TO-220AB Single Bipolar Transistors RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-220AB | |
| Current - Collector Cutoff | 200uA | |
| Vbe On(VBE(on)) | 2.5V | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 2W | |
| type | NPN | |
| Current - Collector(Ic) | 5A | |
| Vce Saturation(VCE(sat)) | 4V@5A,20mA | |
| Operating Temperature | -65℃~+150℃@(Tj) |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Designed for general-purpose amplifier and low-speed switching applications.
Features
AI Translation
- High DC current gain — hFE = 2500 (typical), @ IC = 4.0 Adc
- Collector-emitter sustaining voltage — @ 100 mA ADC
- Low collector-emitter saturation voltage — VCE(sat) = 2.0 Vdc (max), @ IC = 3.0 Adc; VCE(sat) = 4.0 Vdc (max), @ IC = 5.0 Adc
- Monolithic structure with built-in base-emitter shunt resistor
- Available in lead-free package*
Applications
AI Translation
- General-purpose amplifier
- Low-speed switching applications
In-Stock: 130
130 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0109 | $ 1.01 |
| 10+ | $ 0.8283 | $ 8.28 |
| 30+ | $ 0.737 | $ 22.11 |
| 100+ | $ 0.6213 | $ 62.13 |
| 500+ | $ 0.5658 | $ 282.90 |
| 1,000+ | $ 0.5381 | $ 538.10 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-220AB | |
| Current - Collector Cutoff | 200uA | |
| Vbe On(VBE(on)) | 2.5V | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 2W | |
| type | NPN | |
| Current - Collector(Ic) | 5A | |
| Vce Saturation(VCE(sat)) | 4V@5A,20mA | |
| Operating Temperature | -65℃~+150℃@(Tj) |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Designed for general-purpose amplifier and low-speed switching applications.
Features
AI Translation
- High DC current gain — hFE = 2500 (typical), @ IC = 4.0 Adc
- Collector-emitter sustaining voltage — @ 100 mA ADC
- Low collector-emitter saturation voltage — VCE(sat) = 2.0 Vdc (max), @ IC = 3.0 Adc; VCE(sat) = 4.0 Vdc (max), @ IC = 5.0 Adc
- Monolithic structure with built-in base-emitter shunt resistor
- Available in lead-free package*
Applications
AI Translation
- General-purpose amplifier
- Low-speed switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



