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onsemi NSBC123TPDP6T5G product image
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onsemi NSBC123TPDP6T5GRoHS

Manufacturer
MPN
NSBC123TPDP6T5G
LCSC Part #
C896387
Packaging
SOT-963
Customer #
Key Attributes
160 339mW 100mA 50V SOT-963 Bipolar Transistor Arrays, Pre-Biased RoHS
Datasheetpdf icononsemi NSBC123TPDP6T5G

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
Manufactureronsemi
PackagingSOT-963
DC Current Gain160
Input Resistor2.2kΩ
Number-
Pd - Power Dissipation339mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging8000
Sales UnitPiece

Introduction

AI Translation

This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. A Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-to-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using a BRT reduces system cost and saves board space.

Features

AI Translation
  • S and NSV prefixes for automotive and other applications requiring unique origin and change control requirements; AEC-Q101 qualified with PPAP capability
  • Simplified circuit design
  • Board space savings
  • Reduced component count
  • Lead-free, halogen-free/BFR-free, and RoHS compliant
Out of Stock
Stock Notification
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.0756$ 0.08
200+$ 0.0293$ 5.86
500+$ 0.0283$ 14.15
1,000+$ 0.0277$ 27.70
Standard Packaging8000/Full Reel
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