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onsemi NTZD3155CT2G product image
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onsemi NTZD3155CT2GRoHS

Manufacturer
onsemi
MPN
NTZD3155CT2G
LCSC Part #
C895156
Packaging
SOT-563
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 20V 540mA SOT-563
Datasheetpdf icononsemi NTZD3155CT2G
In-Stock: 2,025
2,025 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.1447$ 0.1013$ 0.51
50+$ 0.1276$ 0.0894$ 4.47
150+$ 0.1203$ 0.0843$ 12.65
500+$ 0.1111$ 0.0778$ 38.90
2,500+$ 0.1071$ 0.0750$ 187.50
4,000+$ 0.1046$ 0.0733$ 293.20
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSOT-563
Current - Continuous Drain(Id)540mA
RDS(on)400mΩ@4.5V
Pd - Power Dissipation250mW
Gate Threshold Voltage (Vgs(th))450mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)20pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)150pF
Gate Charge(Qg)2.5nC@4.5V
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

Power SOT N-channel enhancement-mode power MOSFETs are fabricated using a proprietary high cell density DMOS technology. This ultra-high density process is specifically designed to minimize on-resistance and provide superior switching performance. These devices are particularly suited for low-voltage applications such as DC motor control and DC/DC conversion, which demand fast switching, low in-line power loss, and transient immunity.

Features

AI Translation
  • Leading Trench Technology for Low RDS(on) Performance
  • High Efficiency System Performance
  • Low Threshold Voltage
  • ESD Protected Gate
  • Small Footprint 1.6 x 1.6 mm
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

AI Translation
  • DC−DC Conversion Circuits
  • Load/Power Switching with Level Shift
  • Single or Dual Cell Li−Ion Battery Operated Systems
  • High Speed Circuits
  • Cell Phones, MP3s, Digital Cameras, and PDAs