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onsemi NSBC123EDXV6T1G product image
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onsemi NSBC123EDXV6T1GRoHS

Manufacturer
MPN
NSBC123EDXV6T1G
LCSC Part #
C895103
Packaging
SOT-563
Customer #
Key Attributes
357mW 100mA 50V SOT-563 Bipolar Transistor Arrays, Pre-Biased RoHS
Datasheetpdf icononsemi NSBC123EDXV6T1G

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
Manufactureronsemi
PackagingSOT-563
Input Resistor2.9kΩ
Resistor Ratio1
Pd - Power Dissipation357mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

This series of digital transistors is designed to replace individual discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a base series resistor and a base-emitter resistor. By combining these discrete components into a single device, the BRT eliminates the need for separate components. Using a BRT reduces system cost and saves board space.

Features

AI Translation
  • Simplified circuit design
  • Board space savings
  • Reduced component count
  • Automotive and other applications requiring unique site and control change requirements, with S and NSV prefixes; AEC-Q101 qualified with PPAP capability
  • Lead-free, halogen-free/BFR-free, and RoHS compliant
Out of Stock
Stock Notification
Add to BOM List
QtyUnit Price(Reference Only)Total Amount
1+$ 0.1296$ 0.13
200+$ 0.0502$ 10.04
500+$ 0.0484$ 24.20
1,000+$ 0.0476$ 47.60
Standard Packaging4000/Full Reel
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