onsemi FDT86246L
| Manufacturer | |
| MPN | FDT86246L |
| LCSC Part # | C894836 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET N-CH 150V 2A SOT-223 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 228mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 335pF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MOSFET is produced using advanced PowerTrench process that has been optimized for rDS(on), switching performance and ruggedness.
Features
AI Translation
- Max rDS(on)=228 mΩ at VGS=10 V, ID=2 A
- Max rDS(on)=280 mΩ at VGS=4.5 V, ID=1.8 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Fast switching speed
- 100% UIL Tested
- RoHS Compliant
Applications
AI Translation
- Load Switch
- Primary Switch
- Buck/Boost Switch
In-Stock: 258
258 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9855 | $ 0.99 |
| 10+ | $ 0.7968 | $ 7.97 |
| 30+ | $ 0.7041 | $ 21.12 |
| 100+ | $ 0.6098 | $ 60.98 |
| 500+ | $ 0.5545 | $ 277.25 |
| 1,000+ | $ 0.5253 | $ 525.30 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 228mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 335pF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MOSFET is produced using advanced PowerTrench process that has been optimized for rDS(on), switching performance and ruggedness.
Features
AI Translation
- Max rDS(on)=228 mΩ at VGS=10 V, ID=2 A
- Max rDS(on)=280 mΩ at VGS=4.5 V, ID=1.8 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Fast switching speed
- 100% UIL Tested
- RoHS Compliant
Applications
AI Translation
- Load Switch
- Primary Switch
- Buck/Boost Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



