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onsemi FDT86246LRoHS

Manufacturer
MPN
FDT86246L
LCSC Part #
C894836
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 150V 2A SOT-223
Datasheetpdf icononsemi FDT86246L
In-Stock: 258
258 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.9855$ 0.99
10+$ 0.7968$ 7.97
30+$ 0.7041$ 21.12
100+$ 0.6098$ 60.98
500+$ 0.5545$ 277.25
1,000+$ 0.5253$ 525.30
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-223
Drain to Source Voltage150V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)228mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)335pF
Gate Charge(Qg)-

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

This N-Channel MOSFET is produced using advanced PowerTrench process that has been optimized for rDS(on), switching performance and ruggedness.

Features

AI Translation
  • Max rDS(on)=228 mΩ at VGS=10 V, ID=2 A
  • Max rDS(on)=280 mΩ at VGS=4.5 V, ID=1.8 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant

Applications

AI Translation
  • Load Switch
  • Primary Switch
  • Buck/Boost Switch