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onsemi FDT86102LZRoHS

Manufacturer
onsemi
MPN
FDT86102LZ
LCSC Part #
C894832
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 100V 6.6A SOT-223
Datasheetpdf icononsemi FDT86102LZ
In-Stock: 111
111 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.1954$ 1.20
10+$ 0.9983$ 9.98
30+$ 0.8909$ 26.73
100+$ 0.6726$ 67.26
500+$ 0.6189$ 309.45
1,000+$ 0.5945$ 594.50
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-223
Drain to Source Voltage100V
Current - Continuous Drain(Id)6.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)7.5pF
RDS(on)22mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.49nF
Gate Charge(Qg)25nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is manufactured using onsemi's advanced POWERTRENCH process, which is specially designed to minimize on-resistance and switching losses. A G-S Zener diode is incorporated to enhance ESD voltage levels.

Features

AI Translation
  • Maximum rDS(on) = 28mΩ at VGS = 10V, ID = 6.6A
  • Maximum rDS(on) = 38mΩ at VGS = 4.5V, ID = 5.5A
  • HBM ESD protection rating typical value > 6kV
  • Very low Qg and Qgd compared to competing trench technologies
  • Fast switching speed
  • 100% UIL tested
  • Lead-free, halogen-free, and RoHS compliant

Applications

AI Translation
  • DC-DC conversion
  • Inverter
  • Synchronous rectifier