onsemi NTJD1155LT2G
| Manufacturer | |
| MPN | NTJD1155LT2G |
| LCSC Part # | C894002 |
| Packaging | SC-88-6 |
| Customer # | |
| Key Attributes | 175mΩ@4.5V 1V 1 N-Channel + 1 P-Channel SC-88-6 FET, MOSFET Arrays RoHS |
| Datasheet |  onsemi NTJD1155LT2G |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SC-88-6 | |
| RDS(on) | 175mΩ@4.5V | |
| Pd - Power Dissipation | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 8V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Operating Temperature | -55℃~+150℃ |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench technology. The N−Channel, with an external resistor (R1), functions as a level−shift to drive the P−Channel. The N−Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VIN and VON/OFF.
Features
- Extremely Low RDS(on) P−Channel Load Switch MOSFET
- Level Shift MOSFET is ESD Protected
- Low Profile, Small Footprint Package
- VIN Range 1.8 to 8.0 V
- ON/OFF Range 1.5 to 8.0 V
- These Devices are Pb−Free and are RoHS Compliant
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.303 | $ 0.30 |
| 10+ | $ 0.2948 | $ 2.95 |
| 30+ | $ 0.2916 | $ 8.75 |
| 100+ | $ 0.2867 | $ 28.67 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SC-88-6 | |
| RDS(on) | 175mΩ@4.5V | |
| Pd - Power Dissipation | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 8V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Operating Temperature | -55℃~+150℃ |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench technology. The N−Channel, with an external resistor (R1), functions as a level−shift to drive the P−Channel. The N−Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VIN and VON/OFF.
Features
- Extremely Low RDS(on) P−Channel Load Switch MOSFET
- Level Shift MOSFET is ESD Protected
- Low Profile, Small Footprint Package
- VIN Range 1.8 to 8.0 V
- ON/OFF Range 1.5 to 8.0 V
- These Devices are Pb−Free and are RoHS Compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |