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onsemi NSVMUN5332DW1T1GRoHS

Manufacturer
MPN
NSVMUN5332DW1T1G
LCSC Part #
C893978
Packaging
SOT-363
Customer #
Key Attributes
TRANS PREBIAS 50V SOT-363
Datasheetpdf icononsemi NSVMUN5332DW1T1G
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.3431$ 1.72
50+$ 0.2731$ 13.66
150+$ 0.243$ 36.45
500+$ 0.2056$ 102.80
3,000+$ 0.1889$ 566.70
6,000+$ 0.1789$ 1073.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
Manufactureronsemi
PackagingSOT-363
Current - Collector Cutoff100nA
DC Current Gain15
Vce Saturation(VCE(sat))250mV
Output Voltage(VO(on))200mV
Input Resistor6.1kΩ
Resistor Ratio1.2
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))1.2V
Input Voltage (VI(on)@Ic,Vce)2.4V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN+PNP
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Operating Temperature-55℃~+150℃

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

AI Translation
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant