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onsemi NSVMUN5212DW1T1G product image
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onsemi NSVMUN5212DW1T1GRoHS

Manufacturer
MPN
NSVMUN5212DW1T1G
LCSC Part #
C893971
Packaging
SOT-363
Customer #
Key Attributes
60 250mW 100mA 50V 2 NPN (Pre-Biased) SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS
Datasheetpdf icononsemi NSVMUN5212DW1T1G
In-Stock: 12,000
12,000 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4083$ 0.41
10+$ 0.3221$ 3.22
30+$ 0.2863$ 8.59
100+$ 0.2408$ 24.08
500+$ 0.2196$ 109.80
1,000+$ 0.2083$ 208.30
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
Manufactureronsemi
PackagingSOT-363
Current - Collector Cutoff100nA
Transition frequency(fT)-
Emitter-Base Voltage VEBO-
DC Current Gain60
Vce Saturation(VCE(sat))250mV@10mA,0.3mA
Output Voltage(VO(on))-
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))-
Input Voltage (VI(on)@Ic,Vce)1.9V@5mA,200mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN
Number2 NPN (Pre-Biased)
Operating Temperature-55℃~+150℃

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and board space.

Features

AI Translation
  • Simplified circuit design
  • Reduced board space
  • Reduced component count
  • S and NSV prefixes for automotive and other applications requiring unique origin and change control requirements; AEC-Q101 compliant with PPAP capability
  • These devices are lead-free, halogen-free/BFR-free, and RoHS compliant