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onsemi FDY1002PZRoHS

Manufacturer
onsemi
MPN
FDY1002PZ
LCSC Part #
C891137
Packaging
SOT-563F
Customer #
Key Attributes
MOSFET P-CH ARR 20V 0.83A SOT-563F
Datasheetpdf icononsemi FDY1002PZ
In-Stock: 26
26 In stock, ships now
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Once stock is depleted, this item will be marked as "Out of Stock."
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QtyUnit PriceTotal Amount
1+$ 1.0562$ 0.1479$ 0.15
10+$ 0.86$ 0.1204$ 1.20
30+$ 0.7627$ 0.1068$ 3.20
100+$ 0.6653$ 0.0932$ 9.32
500+$ 0.6079$ 0.0852$ 42.60
1,000+$ 0.5776$ 0.0809$ 80.90
Standard Packaging3000/Full Reel

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSOT-563F
Current - Continuous Drain(Id)830mA
RDS(on)500mΩ@4.5V
Pd - Power Dissipation625mW
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number2 P-Channel
Input Capacitance(Ciss)135pF
Gate Charge(Qg)3.1nC@4.5V
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This Dual P-Channel MOSFET has been designed using advanced PowerTrench process to optimize the RDS(on) at VGS = -1.5V

Features

AI Translation
  • Max RDS(on) = 0.5 Ω at VGS = -4.5 V, ID = -0.83 A
  • Max RDS(on) = 0.7 Ω at VGS = -2.5 V, ID = -0.70 A
  • Max RDS(on) = 1.2 Ω at VGS = -1.8 V, ID = -0.43 A
  • Max RDS(on) = 1.8 Ω at VGS = -1.5 V, ID = -0.36 A
  • HBM ESD protection level = 1400 V
  • DoHS compliant

Applications

AI Translation
  • Li-lon Battery Pack