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onsemi FDN86246RoHS

Manufacturer
onsemi
MPN
FDN86246
LCSC Part #
C891118
Packaging
SOT-23-3
Customer #
Key Attributes
150V 1.6A 3.4V 1.5W 195mΩ@10V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS
Datasheetpdf icononsemi FDN86246
In-Stock: 129
129 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.9477$ 0.95
10+$ 0.7643$ 7.64
30+$ 0.6717$ 20.15
100+$ 0.5808$ 58.08
500+$ 0.501$ 250.50
1,000+$ 0.4723$ 472.30
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-23-3
Drain to Source Voltage150V
Output Capacitance(Coss)21pF
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)1.6pF
RDS(on)195mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)225pF
Gate Charge(Qg)2.9nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is fabricated using an advanced Power Trench® process, optimized for on-resistance rDS(on), switching performance, and durability.

Features

AI Translation
  • Maximum on-resistance rDS(on) = 261 mΩ at VGS = 10 V, ID = 1.6 A
  • Maximum on-resistance rDS(on) = 359 mΩ at VGS = 6 V, ID = 1.4 A
  • High-performance trench technology for ultra-low rDS(on)
  • Industry-standard SMT package with high power and current handling capability
  • Fast switching speed
  • 100% UII tested
  • RoHS compliant

Applications

AI Translation
  • Power Distribution Switch