onsemi FDMC86259P
| Manufacturer | |
| MPN | FDMC86259P |
| LCSC Part # | C890968 |
| Packaging | Power33-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 150V 13A Power33-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power33-8 | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 13A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Pd - Power Dissipation | 62W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 137mΩ@6V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.045nF | |
| Gate Charge(Qg) | 32nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-Channel MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
AI Translation
- Max RDS(on)=107 mΩ at VGS=-10 V, ID=-3 A
- Max RDS(on)=137 mΩ at VGS=-6 V, ID=-2.7 A
- Very low RDS-on mid voltage P channel silicon technology optimised for low QS
- This product is optimised for fast switching applications as well as load switch applications
- 100% UIL Tested
- RoHS Compliant
Applications
AI Translation
- Active Clamp Switch
- Load Switch
- Power 33
In-Stock: 60
60 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.9103 | $ 3.91 |
| 10+ | $ 3.3538 | $ 33.54 |
| 30+ | $ 3.0231 | $ 90.69 |
| 100+ | $ 2.6875 | $ 268.75 |
| 500+ | $ 2.5327 | $ 1266.35 |
| 1,000+ | $ 2.4633 | $ 2463.30 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power33-8 | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 13A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Pd - Power Dissipation | 62W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 137mΩ@6V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.045nF | |
| Gate Charge(Qg) | 32nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-Channel MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
AI Translation
- Max RDS(on)=107 mΩ at VGS=-10 V, ID=-3 A
- Max RDS(on)=137 mΩ at VGS=-6 V, ID=-2.7 A
- Very low RDS-on mid voltage P channel silicon technology optimised for low QS
- This product is optimised for fast switching applications as well as load switch applications
- 100% UIL Tested
- RoHS Compliant
Applications
AI Translation
- Active Clamp Switch
- Load Switch
- Power 33
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



