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onsemi FDMC86240RoHS

Manufacturer
onsemi
MPN
FDMC86240
LCSC Part #
C890966
Packaging
WDFN-8(3.3x3.3)
Customer #
Key Attributes
N-Channel Shielded Gate PowerTrench MOSFET
Datasheetpdf icononsemi FDMC86240
In-Stock: 59
59 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.8109$ 1.81
10+$ 1.7687$ 17.69
30+$ 1.7411$ 52.23
100+$ 1.7136$ 171.36
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingWDFN-8(3.3x3.3)
Drain to Source Voltage150V
Output Capacitance(Coss)79pF
Current - Continuous Drain(Id)4.6A
Gate Threshold Voltage (Vgs(th))2.9V
Pd - Power Dissipation2.3W
RDS(on)41.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)4.3pF
Number1 N-channel
Input Capacitance(Ciss)680pF
Gate Charge(Qg)11nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-Channel MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

AI Translation
  • Shielded Gate MOSFET Technology
  • Max rDS(on)=51 mΩ at VGS=10 V, ID=4.6 A
  • Max rDS(on)=70 mΩ at VGS=6 V, ID=3.9 A
  • Low Profile - 1 mm max in Power 33
  • 100% UIL Tested
  • RoHS Compliant

Applications

AI Translation
  • DC - DC Conversion