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onsemi FDMC8032L
| Manufacturer | |
| MPN | FDMC8032L |
| LCSC Part # | C890953 |
| Packaging | Power33-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 40V 7A Power33-8 |
| Datasheet |  onsemi FDMC8032L |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | Power33-8 | |
| Current - Continuous Drain(Id) | 7A | |
| RDS(on) | 27mΩ@4.5V | |
| Pd - Power Dissipation | 1.9W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 40V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 720pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This device integrates two 40 V N-channel MOSFETs in a Dual Power 33 (3 mm x 3 mm MLP) package. The package is optimized for excellent thermal performance.
Features
AI Translation
- Maximum r DS(on) = 20 mΩ at V GS = 10 V, I D = 7 A
- Maximum r DS(on) = 27 mΩ at V GS = 4.5 V, I D = 6 A
- Low-inductance package for reduced rise/fall times
- Lower switching losses
- 100% Rg tested
- Lead-free and RoHS compliant
Applications
AI Translation
- Battery Protection - Load Switch - Point of Load
In-Stock: 73
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6149 | $ 0.61 |
| 10+ | $ 0.6004 | $ 6.00 |
| 30+ | $ 0.5924 | $ 17.77 |
| 100+ | $ 0.5827 | $ 58.27 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | Power33-8 | |
| Current - Continuous Drain(Id) | 7A | |
| RDS(on) | 27mΩ@4.5V | |
| Pd - Power Dissipation | 1.9W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 40V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 720pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This device integrates two 40 V N-channel MOSFETs in a Dual Power 33 (3 mm x 3 mm MLP) package. The package is optimized for excellent thermal performance.
Features
AI Translation
- Maximum r DS(on) = 20 mΩ at V GS = 10 V, I D = 7 A
- Maximum r DS(on) = 27 mΩ at V GS = 4.5 V, I D = 6 A
- Low-inductance package for reduced rise/fall times
- Lower switching losses
- 100% Rg tested
- Lead-free and RoHS compliant
Applications
AI Translation
- Battery Protection - Load Switch - Point of Load
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |