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onsemi FDMC510PRoHS

Manufacturer
onsemi
MPN
FDMC510P
LCSC Part #
C890933
Packaging
WDFN-8(3.3x3.3)
Customer #
Key Attributes
MOSFET P-CH 20V 18A WDFN-8(3.3x3.3)
Datasheetpdf icononsemi FDMC510P
In-Stock: 221
221 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.0122$ 1.01
10+$ 0.863$ 8.63
30+$ 0.7868$ 23.60
100+$ 0.7138$ 71.38
500+$ 0.6473$ 323.65
1,000+$ 0.6246$ 624.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingWDFN-8(3.3x3.3)
Drain to Source Voltage20V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation41W
Reverse Transfer Capacitance (Crss@Vds)1.11nF
RDS(on)8mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)7.86nF
Gate Charge(Qg)116nC@4.5V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This P−Channel MOSFET is produce using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(ON), switching performance and ruggedness.

Features

AI Translation
  • Max rDS(on)=8.0 mΩ at VGS=-4.5 V, ID=-12 A
  • Max rDS(on)=9.8 mΩ at VGS=-2.5 V, ID=-10 A
  • Max rDS(on)=13 mΩ at VGS=-1.8 V, ID=-9.3 A
  • Max rDS(on)=17 mΩ at VGS=-1.5 V, ID=-8.3 A
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • 100% UIL Tested
  • HBM ESD Capability Level >2 kV Typical
  • This Device is Pb−Free, Halide Free and is RoHS Compliant

Applications

AI Translation
  • Battery Management
  • Load Switch