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onsemi FDC642PRoHS

Manufacturer
onsemi
MPN
FDC642P
LCSC Part #
C890875
Packaging
SSOT-6
Customer #
Key Attributes
MOSFET P-CH 20V 4A SSOT-6
Datasheetpdf icononsemi FDC642P
In-Stock: 243
243 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.4851$ 0.49
10+$ 0.3776$ 3.78
30+$ 0.3304$ 9.91
100+$ 0.2718$ 27.18
500+$ 0.2474$ 123.70
1,000+$ 0.2312$ 231.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSSOT-6
Drain to Source Voltage20V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)65mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)925pF
Gate Charge(Qg)16nC@4.5V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor's advanced PowerTrench? process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

Features

AI Translation
  • Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
  • Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
  • Fast switching speed
  • Low gate charge (11 nC typical)
  • High performance trench technology for extremely low rDS(on)
  • SuperSOTTM - 6 package: small footprint (72% smaller than standard SO - 8); low profile (1 mm thick)
  • Termination lead - free and RoHS Compliant

Applications

AI Translation
  • Load switch
  • Battery protection
  • Power management