LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
onsemi SVD5867NLT4G product image
  • SVD5867NLT4G thumbnail 1
  • SVD5867NLT4G thumbnail 2
  • SVD5867NLT4G thumbnail 3
  • Pinout
  • Footprint
Images for reference only

onsemi SVD5867NLT4GRoHS

Manufacturer
MPN
SVD5867NLT4G
LCSC Part #
C889916
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET 60V 22A TO-252(DPAK)
Datasheetpdf icononsemi SVD5867NLT4G
In-Stock: 2
2 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7885$ 0.79
10+$ 0.6428$ 6.43
30+$ 0.57$ 17.10
100+$ 0.4972$ 49.72
500+$ 0.4544$ 227.20
1,000+$ 0.4322$ 432.20
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-252(DPAK)
Drain to Source Voltage60V
Current - Continuous Drain(Id)22A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation43W
RDS(on)39mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)47pF
Number1 N-channel
Input Capacitance(Ciss)675pF
Gate Charge(Qg)15nC@10V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This power MOSFET is fabricated using advanced planar vertical double-diffused metal-oxide-semiconductor (VDMOS) technology. The resulting device features low on-resistance, superior switching performance, and high avalanche energy.

Features

AI Translation
  • Low RDS(on) to Minimize Conduction Losses
  • High Current Capability
  • Avalanche Energy Specified
  • AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

AI Translation
  • Power Factor Correction
  • Switched-Mode Power Supply
  • LED Driver