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VBsemi Elec FQD18N20V2TM-VB product image
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VBsemi Elec FQD18N20V2TM-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
FQD18N20V2TM-VB
LCSC Part #
C879093
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 200V 30A TO-252
Datasheetpdf iconVBsemi Elec FQD18N20V2TM-VB
In-Stock: 43
43 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.7351$ 1.4749$ 1.47
10+$ 1.4802$ 1.2582$ 12.58
30+$ 1.3204$ 1.1224$ 33.67
100+$ 1.1573$ 0.9838$ 98.38
500+$ 1.0829$ 0.9205$ 460.25
1,000+$ 1.0512$ 0.8936$ 893.60
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-252
Configuration-
Drain to Source Voltage200V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)55mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
Gate Charge(Qg)34nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • Trench power MOSFET
  • Junction temperature 175°C
  • PWM optimized
  • 100% gate resistance (Rg) tested
  • RoHS compliant with directive 2002/95/EC

Applications

AI Translation
  • Primary-side switch