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VBsemi Elec FQD12P10-VB product image
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VBsemi Elec FQD12P10-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
FQD12P10-VB
LCSC Part #
C878907
Packaging
TO-252
Customer #
Key Attributes
MOSFET P-CH 100V 8.8A TO-252
Datasheetpdf iconVBsemi Elec FQD12P10-VB
In-Stock: 298
298 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5589$ 0.56
10+$ 0.4433$ 4.43
30+$ 0.3942$ 11.83
100+$ 0.3325$ 33.25
500+$ 0.3056$ 152.80
1,000+$ 0.2898$ 289.80
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-252
Output Capacitance(Coss)65pF
Pd - Power Dissipation32.1W
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)8.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)250mΩ@10V;280mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.055nF
Gate Charge(Qg)23.2nC@10V;11.7nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • Compliant with halogen-free requirements as defined by IEC 61249-2-21
  • Trench power MOSFET
  • 100% Rg and UIS tested
  • Compliant with RoHS Directive 2002/95/EC

Applications

AI Translation
  • Power Switches - DC/DC Converters